Optimization of dislocation edge stress effects for si n-type metal-oxide-semiconductor field-effect transistors

Liao, M.-H.M.-H.LiaoChen, C.-H.C.-H.ChenChang, L.-C.L.-C.ChangYang, C.C.YangYu, M.-Y.M.-Y.YuLiu, G.-H.G.-H.LiuKao, S.-C.S.-C.Kao2019-03-112019-03-112013https://scholars.lib.ntu.edu.tw/handle/123456789/404488Optimization of dislocation edge stress effects for si n-type metal-oxide-semiconductor field-effect transistorsconference proceedings10.7567/JJAP.52.04CC202-s2.0-84880827651