Dhara S.Datta A.Wu C.T.Lan Z.H.Chen K.H.Wang Y.L.Chen L.C.Hsu C.W.Lin H.M.Chen C.C.LI-CHYONG CHEN2022-08-092022-08-09200300036951https://www.scopus.com/inward/record.uri?eid=2-s2.0-0037455247&doi=10.1063%2f1.1536250&partnerID=40&md5=307f9c8cb9ca973ca6eee92db75c46bchttps://scholars.lib.ntu.edu.tw/handle/123456789/616408A study of Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NW) was presented. Observation of the defect structures in the irradiated samples suggested agglomeration of point-defect clusters to be the major component of disorder at high fluences. The results showed that dynamic annealing plays an important role in emphasizing the layer-by-layer structure of defect accumulation in the intermediate fluence range.Amorphization;Annealing;Chemical vapor deposition;Ion beams;Ion implantation;Point defects;Thin films;Nanowires (NW);Gallium nitridejournal article10.1063/1.15362502-s2.0-0037455247