Trapping characteristics of Al2O3/HfO 2/SiO1-2 stack structure prepared by low temperature in situ oxidation in dc sputtering

Chang, C.-H.C.-H.ChangHwu, J.-G.J.-G.HwuJENN-GWO HWU2018-09-102018-09-102009http://www.scopus.com/inward/record.url?eid=2-s2.0-67249095674&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/347694Trapping characteristics of Al2O3/HfO 2/SiO1-2 stack structure prepared by low temperature in situ oxidation in dc sputteringjournal article10.1063/1.3120942