毛明華2006-07-252018-07-052006-07-252018-07-052002-07-31http://ntur.lib.ntu.edu.tw//handle/246246/11216本計畫的研究目標在於： In(Ga)As/GaAs 量子點的成長、其發光特 性的分析、及其發光元件的研究。 InGaAs/GaAs 量子點結構，突破了在 GaAs 基板上成長InGaAs/GaAs 量子井的 限制，將發光波長延伸至1.3 mm，因此可 望在光纖通訊上有重要應用。我們將用 MBE 成長InAs/GaAs 量子點，繼而延伸至 發光波長在1.3 mm的InGaAs/GaAs 系統。 此外，也將製作Fabry-Perot 量子點雷射二 極體，並探討其高速調制應用方面的潛力。The research topics of this project are: growth of In(Ga)As/GaAs quantum dots, analysis of their optical properties, and application as light-emitting devices. InGaAs/GaAs quantum-dot structures have extended the emission wavelength to 1.3 mm, breaking the limit of InGaAs/GaAs quantum wells on the GaAs substrate. Therefore, they will find important applications in fiber communication. We use MBE to growth InAs/GaAs quantum dots, and extend to the InGaAs/GaAs system with emission wavelength at 1.3 mm. Furthermore, Fabry-Perot QD laser diodes are fabricated, and their potentials in high-speed modulation are investigated.application/pdf362029 bytesapplication/pdfzh-TW國立臺灣大學光電工程學研究所半導體量子點半導體雷射變 率方程式Semiconductor quantum dotsSemiconductor lasersRate equationsreporthttp://ntur.lib.ntu.edu.tw/bitstream/246246/11216/1/902215E002038.pdf