A 33.6-to-33.8 Gb/s burst-mode CDR in 90 nm CMOS technology

Cho, L.-C.L.-C.ChoLee, C.C.LeeHung, C.-C.C.-C.HungSHEN-IUAN LIU2020-06-112020-06-112009https://scholars.lib.ntu.edu.tw/handle/123456789/499868A 33.6-to-33.8 Gb/s burst-mode CDR in 90 nm CMOS technologyjournal article10.1109/JSSC.2008.20123262-s2.0-61449172206https://www.scopus.com/inward/record.uri?eid=2-s2.0-61449172206&doi=10.1109%2fJSSC.2008.2012326&partnerID=40&md5=a812a1315c4bbcf69cfd55882c06b85b