Kwo, J.J.KwoMINGHWEI HONGKortan, A.R.A.R.KortanQueeney, K.T.K.T.QueeneyChabal, Y.J.Y.J.ChabalMannaerts, J.P.J.P.MannaertsBoone, T.T.BooneKrajewski, J.J.J.J.KrajewskiSergent, A.M.A.M.SergentRosamilia, J.M.J.M.Rosamilia2019-12-272019-12-272000https://scholars.lib.ntu.edu.tw/handle/123456789/443480High εΊ° gate dielectrics Gd<inf>2</inf>O<inf>3</inf>and Y<inf>2</inf>O<inf>3</inf>for siliconjournal article10.1063/1.1268992-s2.0-0001705774https://www.scopus.com/inward/record.uri?eid=2-s2.0-0001705774&doi=10.1063%2f1.126899&partnerID=40&md5=27ef65e022719bd58231d467a4ed3e43