Effect of H-2 addition on SiCN film growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

Wu, J. J.J. J.WuChen, K. H.K. H.ChenWen, C. Y.C. Y.WenChen, L. C.L. C.ChenWang, J. K.J. K.WangYu, Y. C.Y. C.YuWang, C. W.C. W.WangCHENG-YEN WENLI-CHYONG CHENWang, J.-K.J.-K.Wang2020-05-122020-05-1220000959-9428https://scholars.lib.ntu.edu.tw/handle/123456789/491140Effect of H-2 addition on SiCN film growth in an electron cyclotron resonance plasma chemical vapor deposition reactorjournal article10.1039/a908523hWOS:000085886200034