5.3 GHz 42% PAE class-E power amplifier with 532 mW/mm2 power area density in 180 nm CMOS process

Alsuraisry, H.H.AlsuraisryWu, M.-H.M.-H.WuHuang, P.-S.P.-S.HuangTsai, J.-H.J.-H.TsaiTIAN-WEI HUANG2020-06-112020-06-112016https://scholars.lib.ntu.edu.tw/handle/123456789/499556[SDGs]SDG75.3 GHz 42% PAE class-E power amplifier with 532 mW/mm2 power area density in 180 nm CMOS processjournal article10.1049/el.2016.16292-s2.0-84978767405https://www.scopus.com/inward/record.uri?eid=2-s2.0-84978767405&doi=10.1049%2fel.2016.1629&partnerID=40&md5=fbedaff0954648566071f9cf78afb7c2