Cheng, Y.-C.Y.-C.ChengLin, E.-C.E.-C.LinWu, C.-M.C.-M.WuRosenauer, A.A.RosenauerMa, K.-J.K.-J.MaShi, S.-C.S.-C.ShiPan, C.-C.C.-C.PanLin, En-ChiangEn-ChiangLinWu, Cheng-MingCheng-MingWuYang, C. C.C. C.YangYang, Jer-RenJer-RenYangRosenauer,RosenauerreasMa, Kung-JenKung-JenMaShi, Shih-ChenShih-ChenShiLI-CHYONG CHENPan, Chang-ChiChang-ChiPanChyi, Jen-InnJen-InnChyiCHIH-CHUNG YANG2018-09-102018-09-102004https://www.scopus.com/inward/record.uri?eid=2-s2.0-2342513400&doi=10.1063%2f1.1690872&partnerID=40&md5=880ca1769edb23d88220698df19dab3bThe carrier localization and nanostructures behaviors of green-luminescence GaN/InGaN quantum-well (QW) structures of various silicon-doping conditions are discussed. The results of photoluminescence (PL), strain state analysis (SSA), detection-energy-dependent photoluminescence excitation (DEDPLE) and excitation-energy-dependent photoluminescence (EEDPL) of three InGaN/GaN QW samples are compared. The SSA images show weaker composition fluctuations in the undoped and well-doped samples and strongly clustering nanostructures in the barrier-doped sample. As a result of the differences in carrier localization, differences in silicon doping between the samples give rise to the differences in EEDPL and DEDPLE spectra.Agglomeration; Composition; Doping (additives); Functions; Gallium nitride; Interfaces (materials); Metallorganic chemical vapor deposition; Microstructure; Nanostructured materials; Photoluminescence; Photons; Sampling; Semiconducting indium compounds; Silicon; Carrier localization; Stark effect; Strain state analysis; Undoped structure; Semiconductor quantum wellsjournal article10.1063/1.16908722-s2.0-2342513400