The effect of germanium fraction on high-field band-to-band tunneling in p+-SiGe/n+-SiGe junctions in forward and reverse biases

Li, J.-Y.J.-Y.LiSturm, J.C.J.C.SturmJIUN-YUN LI2018-09-102018-09-102013http://www.scopus.com/inward/record.url?eid=2-s2.0-84880856836&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/380236The effect of germanium fraction on high-field band-to-band tunneling in p+-SiGe/n+-SiGe junctions in forward and reverse biasesjournal article10.1109/TED.2013.2267172