Floating-Body-Effect-Related Gate Tunneling Leakage Current Phenomenon of 40nm PD SOI NMOS Device

H. J. HungJ. B. KuoC. T. TsaiD. ChenJAMES-B KUO2018-09-102018-09-102009-12http://scholars.lib.ntu.edu.tw/handle/123456789/351960Floating-Body-Effect-Related Gate Tunneling Leakage Current Phenomenon of 40nm PD SOI NMOS Deviceconference paper2-s2.0-77949414328