Electronic structures of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) gate dielectric on n-Ge(001) as grown and after CF <inf>4</inf> plasma treatment: A synchrotron-radiation photoemission study

Pi, T.-W.T.-W.PiLee, W.C.W.C.LeeHuang, M.L.M.L.HuangChu, L.K.L.K.ChuLin, T.D.T.D.LinChiang, T.H.T.H.ChiangWang, Y.C.Y.C.WangWu, Y.D.Y.D.WuMINGHWEI HONGKwo, J.J.Kwo2019-12-272019-12-272011https://scholars.lib.ntu.edu.tw/handle/123456789/443371Electronic structures of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) gate dielectric on n-Ge(001) as grown and after CF <inf>4</inf> plasma treatment: A synchrotron-radiation photoemission studyjournal article10.1063/1.35534422-s2.0-79953646212https://www.scopus.com/inward/record.uri?eid=2-s2.0-79953646212&doi=10.1063%2f1.3553442&partnerID=40&md5=9dc59071f18a2d54401b418d7f7610e9