Multi-energy arsenic-ion-implanted GaAs photoconductors for ultrafast switching and THz generation

Pan, Ci-LingCi-LingPanLiu, Tze-AnTze-AnLiuLin, Gong-RuGong-RuLinTani, MasahikoMasahikoTaniGONG-RU LIN2018-09-102018-09-102000http://www.scopus.com/inward/record.url?eid=2-s2.0-0034475870&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/289902Multi-energy arsenic-ion-implanted GaAs photoconductors for ultrafast switching and THz generationconference paper