Lee, Ching-TingChing-TingLeeShyu, Kuo-ChuanKuo-ChuanShyuLin, Iang-JengIang-JengLinLin, Hao-HsiungHao-HsiungLin2009-03-182018-07-062009-03-182018-07-062000https://www.scopus.com/inward/record.uri?eid=2-s2.0-0033730097&doi=10.1016%2fS0921-5107%2899%2900551-6&partnerID=40&md5=1b4357b193ffc8ecaa2596bcb48ae702A novel metal-semiconductor field effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) buffer layer was studied. Since the effective potential barrier height is enhanced using the InGaP/GaAs MQB structure, good performances of electronic and optical isolations are achieved. A configuration with the MESFET and sidegate electrode was fabricated to demonstrate the function of the InGaP/GaAs MQB structure.application/pdf135591 bytesapplication/pdfen-USSemiconducting gallium arsenide; Semiconducting indium compounds; Indium gallium phosphide; Multiple quantum barrier (MQB); MESFET devicesjournal article10.1016/S0921-5107(99)00551-62-s2.0-0033730097WOS:000086742000029http://ntur.lib.ntu.edu.tw/bitstream/246246/146045/1/20.pdf