國立臺灣大學電機工程學系暨研究所呂學士2006-07-252018-07-062006-07-252018-07-062003-07-31http://ntur.lib.ntu.edu.tw//handle/246246/7941本計畫首度以磷化銦鎵/砷化鎵異質接面 製程成功地實現5.7GHz 單晶片內插式壓控振 盪器。不同於傳統上改變共振腔電容，本研究 以改變開路增益的方式控制頻率變化，實驗證 實在中心頻率5.7GHz 時，頻率可調範圍達到 400 MHz，可成功地應用於ISM 頻段。A 5.7 GHz monolithic interpolative voltage controlled oscillator using InGaP/GaAs HBT technology is demonstrated for the first time. Frequency tuning is achieved by changing the open loop gain instead of the tank capacitor. The experimental result showed that a 400-MHz tuning range at 5.7 GHz was realized, which can meet the requirement of 5.7GHz ISM band.application/pdf202297 bytesapplication/pdfzh-TW國立臺灣大學電機工程學系暨研究所磷化銦鎵砷化鎵內插式壓控振盪器reporthttp://ntur.lib.ntu.edu.tw/bitstream/246246/7941/1/912219E002021.pdf