Low-leakage in0.53Ga0.47As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic in xGa1-xP buffer

Lin, C.-K.C.-K.LinKuo, H.-C.H.-C.KuoLiao, Y.-S.Y.-S.LiaoGONG-RU LIN2020-06-112020-06-112005https://scholars.lib.ntu.edu.tw/handle/123456789/500122Low-leakage in0.53Ga0.47As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic in xGa1-xP bufferconference paper10.1117/12.5770482-s2.0-17644388169https://www.scopus.com/inward/record.uri?eid=2-s2.0-17644388169&doi=10.1117%2f12.577048&partnerID=40&md5=4a3c95ec30ecd540ecbcb95aa0f5939f