Wu Y.-SHsieh H.-YVITA PI-HO HUSu P.2023-06-092023-06-0920117413106https://www.scopus.com/inward/record.uri?eid=2-s2.0-78650863623&doi=10.1109%2fLED.2010.2089425&partnerID=40&md5=229600740b32f573836b91b457b84d86https://scholars.lib.ntu.edu.tw/handle/123456789/632288This letter investigates the impact of quantum confinement (QC) on the short-channel effect (SCE) of ultrathin-body (UTB) and thin-buried-oxide germanium-on-insulator (GeOI) MOSFETs using an analytical solution of Schrdinger equation verified with TCAD simulation. Our study indicates that, although the QC effect increases the threshold voltage (Vth) roll-off when the channel thickness (Tch) is larger than a critical value (T ch,crit), it may decrease the Vth roll-off of GeOI MOSFETs when the Tch is smaller than Tch,crit. Since Ge and Si channels exhibit different degrees of confinement and Tch,crit, the impact of QC must be considered when one-to-one comparisons between UTB GeOI and Si-on-insulator MOSFETs regarding the SCE are made. © 2010 IEEE.Germanium-on-insulator (GeOI); quantum confinement (QC); threshold voltage roll-offAnalytical solutions; Buried oxides; Channel thickness; Critical value; Germanium-on-insulator; MOSFETs; Schrdinger equations; Short-channel effect; Si-on-insulator; TCAD simulation; threshold voltage roll-off; Ultra-thin-body; Flight dynamics; Germanium; MOSFET devices; Quantum confinement; Threshold voltage; Semiconducting silicon compoundsconference paper10.1109/LED.2010.20894252-s2.0-78650863623