Meng, C.-Y.C.-Y.MengChen, J.-L.J.-L.ChenSI-CHEN LEEChia, C.-T.C.-T.Chia2020-06-112020-06-11200610980121https://scholars.lib.ntu.edu.tw/handle/123456789/498824https://www.scopus.com/inward/record.uri?eid=2-s2.0-33745058734&doi=10.1103%2fPhysRevB.73.245309&partnerID=40&md5=3c9664479eb724572bfbd91bbf99b400Un-doped, N -type, and P -type doped silicon nanowires (SiNWs) were grown at 460°C and 25 Torr via the vapor-liquid-solid (VLS) mechanism. The intensity ratio of anti-Stokes/Stokes (IAS IS) peaks is used as an index of the sample temperature. Different SiNWs exhibit different Raman frequency shifts because their compressive stresses due to heating differ. The slopes of the IAS IS peak ratio versus the Raman frequency for boron-doped, un-doped, phosphorous-doped SiNWs, and bulk Si are -0.078, -0.036, -0.035 and -0.02 per cm-1, respectively. The different slopes reveal the different heating-induced compressive stresses in the SiNWs with different dopants and bulk Si. © 2006 The American Physical Society.journal article10.1103/PhysRevB.73.2453092-s2.0-33745058734