臺灣大學: 電機工程學研究所馮蟻剛王家偉Wang, Chia-WeiChia-WeiWang2013-03-272018-07-062013-03-272018-07-062011http://ntur.lib.ntu.edu.tw//handle/246246/254014本論文運用控制系統之方法，以比例-積分-微分(PID)控制器實現MOSFET閘極驅動電路，並且改善MOSFET的開啟延遲時間和汲極電流上升時間。其中PID控制器、反相器、相加電路的實現採用TI公司的OPA2690運算放大器。此外也使用Infineon公司生產的MOSFET (IPA086N10N3)作為受控廠(Plant)的測試對象。至於輸入訊號源或是控制IC(PWM IC)的輸出訊號則以信號產生器的方波訊號替代。 首先藉由MOSFET在訊號轉換過程的特性，建立出受控廠的線性模型。其次利用控制器設計之方法得出符合暫態響應規格與穩態響應規格的PID控制器。控制器的設計驗證流程則先使用Matlab軟體初步模擬出時間響應特性和頻率響應特性。經由時間響應圖，可大略得知加入控制器後是否有效改善暫態響應和穩態誤差。而頻率響應圖則顯示系統加入控制器後是否容易受到雜訊干擾。此外也利用PSPICE電路模擬軟體模擬PID控制器電路，並且將設計好的控制器參數代入，經由電路模擬的方式推測實際電路實現後的情況。最後則是控制器電路實現，藉此驗證改善的真正結果。 本論文之研究顯示，利用PID控制器實現MOSFET閘極驅動電路，相對於傳統閘極驅動電路來得更安全，也無MOSFET導通不完全的疑慮，而且和訊號源直接驅動方式相比，更可以改善開啟延遲時間和汲極電流上升時間的問題，並減少MOSFET的切換過程所產生的功率損耗，這將有助於系統可操作在更高的頻率。對於電源供應器及電力電子之應用而言，由於可操作在更高的頻率，將使得產品的儲能元件電感和電容體積縮小。This thesis applies the method from control systems and realizes MOSFET gate drive as PID controllers to improve MOSFET’s turn-on delay time and Drain Current rising time. In the realization the PID controller, inverter, and summing junction circuit are implemented with TI’s operational amplifier OPA2690. In addition, the MOSFET IPA086N10N3 by Infrineon is used as the tested plant. The square wave signals generated by a function generator are utilized to simulate the input signal or the PWM controller IC’s output signal. Firstly, based on the signal switching characteristics of the MOSFET plant, a linear model is constructed. Then, a controller design method is applied to derive a PID controller that meets the specifications of the transient and steady-state responses. The software Matlab is used to simulate time and frequency responses. Via the time response curves, it can be judged approximately if the controller improves the transient response and steady-state errors effectively. The frequency response curves are also examined to see if the controller is receptive to noise interference. Moreover, the PSPICE is adopted to simulate the PID controller circuit, with previously designed parameters substituted in, to evaluate the controller’s performance. Finally, the controller circuit is actually implemented to verify the design results. The results of this thesis show that, compared with the traditional gate drive circuit, the PID controller based MOSFET drive circuit is much safer and guarantees MOSFET to be operated under the fully turned-on condition. Compared with the direct drive circuit, there are also a few advantages, such as reduced turn-on delay time and Drain Current rising time, and lower power loss due to the MOSFET switching process. These advantages enable the system to be operable at higher frequencies. In the applications of power supply units and other power electronics it is helpful to shrink the sizes of energy storage components.29515134 bytesapplication/pdfen-USMOSFET閘極驅動電路開啟延遲時間PID控制器Gate Drive CircuitTurn-on delay timePID Controllerthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/254014/1/ntu-100-P97921002-1.pdf