Ultrafast inter-subband hole relaxation in an InGaN multiple-quantum-well laser-diodeantum-well (MQW) laser diode

Gan, K.K.GanBowers, J.J.BowersDenBaars, S.S.DenBaarsCHI-KUANG SUN2023-05-292023-05-292003-01-019781557528209https://scholars.lib.ntu.edu.tw/handle/123456789/631490The femtosecond carrier dynamics in InGaN MQW laser diodes were investigated using a time-resolved bias-lead monitoring technique. Ultrafast inter-subband hole relaxation processes were found to dominated the observed carrier dynamics.Ultrafast inter-subband hole relaxation in an InGaN multiple-quantum-well laser-diodeantum-well (MQW) laser diodeconference paper2-s2.0-85136285777https://api.elsevier.com/content/abstract/scopus_id/85136285777