The effect of inductively-coupled-plasma reactive ion etching power on the etching rate and the surface roughness of a sapphire substrate

Chang, C.-M.C.-M.ChangShiao, M.-H.M.-H.ShiaoChiang, D.D.ChiangYang, C.-T.C.-T.YangCheng, C.-T.C.-T.ChengHsueh, W.-J.W.-J.HsuehWEN-JENG HSUEH2020-01-172020-01-172014https://scholars.lib.ntu.edu.tw/handle/123456789/451903The effect of inductively-coupled-plasma reactive ion etching power on the etching rate and the surface roughness of a sapphire substratejournal article10.1166/jnn.2014.93832-s2.0-84988038637https://www.scopus.com/inward/record.uri?eid=2-s2.0-84988038637&doi=10.1166%2fjnn.2014.9383&partnerID=40&md5=e74c9a538fbc9df1780c1e74568bfe17