Effects of strains and defects on the internal quantum efficiency of InGaN/GaN nanorod light emitting diodes

Chang, C.-H.C.-H.ChangChen, L.-Y.L.-Y.ChenHuang, L.-C.L.-C.HuangWang, Y.-T.Y.-T.WangLu, T.-C.T.-C.LuJIAN-JANG HUANG2020-06-112020-06-112012https://scholars.lib.ntu.edu.tw/handle/123456789/499670Effects of strains and defects on the internal quantum efficiency of InGaN/GaN nanorod light emitting diodesjournal article10.1109/JQE.2012.21871752-s2.0-84863235606https://www.scopus.com/inward/record.uri?eid=2-s2.0-84863235606&doi=10.1109%2fJQE.2012.2187175&partnerID=40&md5=9f32577e66b4dcd79fc534eab97d3fb9