CHIH-I WULee, J.-H.J.-H.LeeWang, P.-S.P.-S.WangPark, H.-D.H.-D.ParkWu, C.-I.C.-I.WuKim, J.-J.J.-J.KimCHIH-I WU2018-09-102018-09-102011http://www.scopus.com/inward/record.url?eid=2-s2.0-80051603070&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/365470A high performance inverted green emission organic light emitting diode with a maximum external quantum efficiency of 20% and a maximum power efficiency of 80 lm/W was realized by properly selecting an electron transporting material to have no energy barrier for electron injection between the n-doped electron transporting layer (n-ETL) and the ETL. Based on the energy levels and the current density-voltage characteristics of electron only devices, we demonstrate that the interface between an n-ETL and an ETL even in homo-junction is as important as the interface between the cathode and the n-ETL for efficient electron injection into an emitting layer. © 2011 Elsevier B.V. All rights reserved.Electron injection; Flexible OLED; Inverted organic light emitting diodes; n-Doped/undoped organic semiconductor junction[SDGs]SDG7Doping (additives); Electron injection; Electrons; Energy barriers; Energy efficiency; Semiconductor diodes; Semiconductor junctions; Current density-voltage characteristics; Efficient electron injection; Electron transporting layer; Electron transporting materials; External quantum efficiency; Flexible OLED; Green emissions; N-doped; Organic light emitting diodes (OLED)journal article10.1016/j.orgel.2011.07.015