Shisheng XiongRobert M JacobbergerSolomon MikaelHyo Seon SuhChi-Chun LiuDalong GengXudong WangMichael S ArnoldZhenqiang MaPaul F NealeyTZU-HSUAN CHANG2019-10-312019-10-31201620452322https://scholars.lib.ntu.edu.tw/handle/123456789/429178https://www.scopus.com/inward/record.uri?eid=2-s2.0-85073623668&doi=10.1038%2fsrep31407&partnerID=40&md5=41def0e2297493e3f4bf71c66b9f1078Directed self-assembly of block copolymers is a scalable method to fabricate well-ordered patterns over the wafer scale with feature sizes below the resolution of conventional lithography. Typically, lithographically-defined prepatterns with varying chemical contrast are used to rationally guide the assembly of block copolymers. The directed self-assembly to obtain accurate registration and alignment is largely influenced by the assembly kinetics. Furthermore, a considerably broad processing window is favored for industrial manufacturing. Using an atomically-thin layer of graphene on germanium, after two simple processing steps, we create a novel chemical pattern to direct the assembly of polystyrene-block-poly(methyl methacrylate). Faster assembly kinetics are observed on graphene/germanium chemical patterns than on conventional chemical patterns based on polymer mats and brushes. This new chemical pattern allows for assembly on a wide range of guiding periods and along designed 90° bending structures. We also achieve density multiplication by a factor of 10, greatly enhancing the pattern resolution. The rapid assembly kinetics, minimal topography and broad processing window demonstrate the advantages of inorganic chemical patterns composed of hard surfaces. © 2016, The Author(s).journal article10.1038/srep31407s2-s2.0-84982238148