First Demonstration of 2-floor GAA In2O3 Nanosheet FET Enabled by TiN Sacrificial Layers and Fluorine Passivation

Wu, Yu-ShanYu-ShanWuLiu, Yuan-MingYuan-MingLiuSung, Hsien-MingHsien-MingSungMa, Rong-WeiRong-WeiMaGracia, JohannesJohannesGraciaFujiwara, HidenariHidenariFujiwaraLu, Kuan-WeiKuan-WeiLuCHEE-WEE LIU2025-10-272025-10-272025-06-08https://scholars.lib.ntu.edu.tw/handle/123456789/732964[SDGs]SDG2First Demonstration of 2-floor GAA In2O3 Nanosheet FET Enabled by TiN Sacrificial Layers and Fluorine Passivationconference paper10.23919/vlsitechnologyandcir65189.2025.11075080