Graduate Inst. of Electro-Opt. Eng., National Taiwan Univ.Liu, C.C.C.C.LiuChen, Y.S.Y.S.ChenJIAN-JANG HUANG2007-04-192018-07-052007-04-192018-07-052006-07https://www.scopus.com/inward/record.uri?eid=2-s2.0-33745785089&doi=10.1049%2fel%3a20061518&partnerID=40&md5=0a7e1d8c0f8f0ac937806de7b541e7a7A high-performance enhancement-mode ZnO thin-film transistor (TFT) on a glass substrate is demonstrated. The ZnO thin film is deposited by RF magnetron sputtering with the presence of O2 at low deposition rate and low temperature. The IDS is as high as 1mA when biased at the saturation region VDS=10-20V and VGS=5V without any post-thermal anneal. The Ion/Ioff ratio is 3×106. The results are among the best ZnO TFTs ever obtained.application/pdf205957 bytesapplication/pdfen-US[SDGs]SDG7journal article10.1049/el:200615182-s2.0-33745785089http://ntur.lib.ntu.edu.tw/bitstream/246246/200704191001016/1/01661996.pdf