MBE-grown high 庥 gate dielectrics of HfO <inf>2</inf> and (Hf-Al)O <inf>2</inf> for Si and III-V semiconductors nano-electronics

Lee, W.C.W.C.LeeLee, Y.J.Y.J.LeeWu, Y.D.Y.D.WuChang, P.P.ChangHuang, Y.L.Y.L.HuangHsu, Y.L.Y.L.HsuMannaerts, J.P.J.P.MannaertsLo, R.L.R.L.LoChen, F.R.F.R.ChenMaikap, S.S.MaikapLee, L.S.L.S.LeeHsieh, W.Y.W.Y.HsiehTsai, M.J.M.J.TsaiLin, S.Y.S.Y.LinGustffson, T.T.GustffsonMINGHWEI HONGKwo, J.J.Kwo2019-12-272019-12-27200510.1016/j.jcrysgro.2004.12.127https://scholars.lib.ntu.edu.tw/handle/123456789/443463MBE-grown high 庥 gate dielectrics of HfO <inf>2</inf> and (Hf-Al)O <inf>2</inf> for Si and III-V semiconductors nano-electronicsconference paper2-s2.0-21044441945https://www.scopus.com/inward/record.uri?eid=2-s2.0-21044441945&doi=10.1016%2fj.jcrysgro.2004.12.127&partnerID=40&md5=e500150eb4459da54513a92904b96b69