Two Capacitance States Memory Characteristic in Metal-oxide-semiconductor (MOS) Structure Controlled by An Outer MOS Gate Ring

H.J.LiC.F.YangJ.G.HwuJENN-GWO HWU2019-10-312019-10-312019https://scholars.lib.ntu.edu.tw/handle/123456789/429091Two Capacitance States Memory Characteristic in Metal-oxide-semiconductor (MOS) Structure Controlled by An Outer MOS Gate Ringjournal article