Graduate Inst. of Electro-Opt. Eng., National Taiwan Univ.Hsieh, C.-L.C.-L.HsiehLiu, T.-M.T.-M.LiuTien, M.-C.M.-C.TienSung, L.-W.L.-W.SungSun, Chi-KuangChi-KuangSunLin, Hao-HsiungHao-HsiungLin2018-09-102018-09-102003http://www.scopus.com/inward/record.url?eid=2-s2.0-84955067205&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/303127Femtosecond carrier dynamics in InGaAsN single quantum well were studied for the first time. Pump-probe measurement shows the enhanced free carrier absorption due to highly excited carriers with a delayed carrier cooling time around 2-3.7ps. © 2003 IEEE.application/pdf76465 bytesapplication/pdf[SDGs]SDG7Absorption cooling; Nanostructures; Photonics; Quantum well lasers; Carrier cooling; Carrier dynamics; Excited carriers; Femtoseconds; Free carrier absorption; InGaAsN; Pump probe measurement; Single quantum well; Semiconductor quantum wellsconference paper10.1109/CLEOPR.2003.12745532-s2.0-84955067205