2004-08-012024-05-18https://scholars.lib.ntu.edu.tw/handle/123456789/700217摘要：本計畫預備研製由100至170至GHz之毫米波頻段單晶體電路。積體電路之製作將使用0.15或0.1微米之高速場效電晶體(GaAs-based MHEMT或 InP-based HEMT)之製程。所計劃研製之單晶積體之電路，包括放大器、混頻器、振盪器及被動控制電路，如切換器、相移器及平衡-不平衡轉換器等。 在我們前一個三年期的計畫，「毫米波單晶電路之研製(1/3)-(3/3)」（NSC 89-2213-E-002-178，90-2213-E-002-049，91-2219-E-002-042）中，已成功地研製出由20至100 GHz 之各項積體電路。此一結果係為應用CIC所洽商穩懋半導體及TRW公司所提供之0.15微米之砷化鎵HEMT MMIC製程。在此一新計畫中，因為我們可用到更佳之HEMT MMIC製程(0.15及0.1微米之MHEMT MMIC及InP HEMT MMIC製程)，來研製更高頻段之積體電路。我們將由W-頻段(75-110 GHz)開始。並將第三年之目標訂為D-頻段(110-170 GHz)。 在元件模型之擷取方面，半導體元件(二極體與電晶體<br> Abstract: This project is proposing the development of monolithic millimeter-wave (MMW) components from 100 to 170 GHz using GaAs or InP-based HEMT MMIC process technologies (e.g. 0.15 or 0.1-m gate-length HEMT). The MMIC components will include low noise amplifiers, power amplifiers, mixers and oscillators, as well as some passive and control components, such as switches, phase shifters, and baluns, etc. The MMIC component development for frequency up to 100 GHz has been demonstrated by our research group in the previous three-year research project “Research and Development of Millimeter-wave Monolithic Circuits (1/3)-(3/3)” founded by National Science Council (NSC 89-2213-E-002-178，90-2213-E-002-049，91-2219-E-002-042). This research utilized 0.15-m gate-length GaAs HEMT MMIC process provided by TRW and WIN Semiconductors. In this new proposed project, we will try to use more advanced technologies (0.15-m GaAs-based MHEMT or 0.1-m InP-based HEMT or MMIC processes) to investigate the feasibility of MMIC components above 100 GHz. We will start from W-band (75-110 GHz) frequency and target for the D-band (110-170 GHz) frequency in this new proposed three-year project. Regarding the modeling techniques, both solid-state device (diode and transistor) models and passive elements will be investigated. The device modeling efforts include device dc and RF characterization and model generation, while the passive element modeling will be exercised via theoretical analysis and then verified by experiments. Test structures for various models will be designed in parallel with the circuit design and placed on the same MMIC mask set such that the models can be verified and then updated for the next iteration. During the MMIC development, some hybrid MIC experiments will be conducted to verify the device model and circuits concept.毫米波W-頻段D-頻段高速場效晶體單晶微波積體電路。Millimeter-waveW-bandD-bandHEMTMMIC