Bo-Chao HuangPu YuYA-PING CHIUChia-Seng ChangRamamoorthy RameshRafal E. Dunin-BorkowskiPhilipp Ebert2018-09-102018-09-102018-01https://doi.org/10.1021/acsnano.7b06004http://scholars.lib.ntu.edu.tw/handle/123456789/401196https://www.scopus.com/inward/record.uri?eid=2-s2.0-85042719252&doi=10.1021%2facsnano.7b06004&partnerID=40&md5=35ade5d8e6325ef1a958091a09380348We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO3/La0.7Sr0.3MnO3 interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides. © 2018 American Chemical Society.atomically resolved electronic states; BiFeO3; complex oxide heterointerfaces; cross-sectional scanning tunneling microscopy; La0.7Sr0.3MnO3Electronic states; Energy gap; Lanthanum compounds; Manganese compounds; Scanning tunneling microscopy; Strontium compounds; BiFeO3; Cross-sectional scanning tunneling microscopies; Electronic interface; Hetero-interfaces; Interface property; La0.7Sr0.3MnO3; Magnetic interface properties; Physical effects; Interface statesjournal article10.1021/acsnano.7b06004293843562-s2.0-85042719252WOS:000426615600020