Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si

CHEE-WEE LIUWong, I.-H.I.-H.WongChen, Y.-T.Y.-T.ChenHuang, S.-H.S.-H.HuangTu, W.-H.W.-H.TuChen, Y.-S.Y.-S.ChenCHEE-WEE LIU2018-09-102018-09-102015http://www.scopus.com/inward/record.url?eid=2-s2.0-84960486010&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/393209Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Sijournal article10.1109/TNANO.2015.2456182