Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high 庥 gate dielectric using a CMOS compatible process

Fu, C.H.C.H.FuLin, Y.H.Y.H.LinLee, W.C.W.C.LeeLin, T.D.T.D.LinChu, R.L.R.L.ChuChu, L.K.L.K.ChuChang, P.P.ChangChen, M.H.M.H.ChenHsueh, W.J.W.J.HsuehChen, S.H.S.H.ChenBrown, G.J.G.J.BrownChyi, J.I.J.I.ChyiKwo, J.J.KwoMINGHWEI HONG2019-12-272019-12-272015https://scholars.lib.ntu.edu.tw/handle/123456789/443322Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high 庥 gate dielectric using a CMOS compatible processjournal article10.1016/j.mee.2015.04.0982-s2.0-84929337456https://www.scopus.com/inward/record.uri?eid=2-s2.0-84929337456&doi=10.1016%2fj.mee.2015.04.098&partnerID=40&md5=b65e6aa21437223a26f383df1f67b83c