張培仁臺灣大學：應用力學研究所林鴻仁Lin, Hon-RenHon-RenLin2007-11-292018-06-292007-11-292018-06-292006http://ntur.lib.ntu.edu.tw//handle/246246/62538隨著通訊系統以及無線感測網路系統的快速發展，體積小、成本低、更具效率的元件急需開發，為達到這個目的，系統單晶片以整合積體電路為目標。然而電路中，被動元件往往會因為矽基材，而損失大部分的能量，譬如說電感的Q值不易提高，而且所佔用的面積也很大。因此，開發適用於RF頻段的薄膜體聲波共振器，不但Q值高、面積小，同時也可以和積體電路製程整合。以薄膜體聲波濾波器過濾訊號，比以往表面聲波元件和陶瓷元件更小、更具效率。 此論文以薄膜體聲波濾波器與CMOS積體電路整合電路為目標，利用聯電0.18um 1P6M CMOS製程設計射頻前端低雜訊放大器，接著在下線回來的晶片上，以微機電後製程製作薄膜體聲波濾波器，預期將放大、濾波兩功能結合起來。 在本篇論文中，除了將薄膜體聲濾波器與低雜訊放大器整合在同一軟體模擬，加速了元件設計、系統整合的速度，也提出了相容於CMOS電路的薄膜體聲波濾波器、共振器的微機電製程。此製程主要是以面加工技術(surface micromachining)為主，比體加工技術(bulk micromachining)更相容於CMOS電路。以上述之軟體整合以及製程技術為基礎，即可將濾波器與放大器的電路設計、分析、製程整合同時達成。除了對薄膜體聲波共振器等相關技術有重大影響之外，對於其他射頻元件整合與系統單晶片達成，亦有相當貢獻。With the great demand of mobile communication systems and sensor network system, smaller, cheaper, and more efficient devices are required. However, passive elements, such as inductors, usually suffer from great loss in silicon substrate. A thin film bulk acoustic wave resonator (FBAR) is a solution for the problems because of high-Q, smaller volume, and integration compatibility. Meanwhile, it has been demonstrated that filter composed of FBARs is superior to the surface acoustic wave (SAW) filter and ceramic filter at even higher frequency. In this thesis, the integration of FBAR filter and low noise amplifier (LNA) is the goal. MEMS processes would be implanted on chip fabricated by UMC 1P6M CMOS process to integrate filter and amplifier functions. Besides co-simulation of FBAR filter and LNA on the same software platform, processes of FBAR or FBAR filter compatible with CMOS IC are demonstrated in this thesis. The processes are realized by surface micromachining, which is more feasible than bulk micromachining in integration. Based on these techniques, the design, simulation, and fabrication of FBAR filter and LNA can be done together, which contribute to FBAR technologies and SOC integration of RF components.誌謝 i 中文摘要 iii Abstract iv Table of Contents v List of Tables vii List of Figures viii Chapter 1 Introduction 1 1.1 Paper Review 1 1.2 Patent Analysis 6 1.3 Motivation 9 1.4 Thesis Overview 10 Chapter 2 FBAR Filter Design 13 2.1 Theory of Piezoelectric Plate 14 2.2 Model of Single FBAR 18 2.3 Design of FBAR Bandpass Filter 27 Chapter 3 Design of Low Noise Amplifier 32 3.1 Design Considerations of Low Noise Amplifier 33 3.1.1 Impedance Matching 33 3.1.2 Noise 34 3.1.3 Nonlinearity 39 3.1.4 Sensitivity and Dynamic Range 41 3.2 Design of Low Noise Amplifier 42 3.2.1 Input/Output Impedance Matching 43 3.2.2 Noise Figure and Gain 46 3.2.3 Stability 46 3.2.4 Nonlinearity 46 3.3 Simulation of Low Noise Amplifier 47 Chapter 4 FBAR and FBAR Filter Process 56 4.1 Process of Sacrificial Layer 62 4.2 Process of Bottom Electrode 67 4.3 Process of Piezoelectric Layer 69 4.4 Process of Top Electrode 72 4.5 Process of Tuning Layer 73 4.6 Process of Release 74 Chapter 5 Measurement of LNA and FBAR 76 5.1 De-embedding for On-Wafer Measurement 76 5.2 Measurement of LNA 79 5.3 Measurement of Resonators 82 5.4 Measurement of Filters 90 Chapter 6 Conclusion 102 6.1 Simulation of LNA and FBAR filter 102 6.2 Design of LNA 102 6.3 Fabrication of FBAR 103 6.4 Design and Fabrication of Filter 103 Reference 104 Appendix A Patents Analysis Tables 110 Appendix B Etching Table of Germanium 117 Appendix C List of Symbols 1184398906 bytesapplication/pdfen-US薄膜體聲波共振器薄膜體聲波濾波器低雜訊放大器系統單晶片Film Bulk Acoustic Wave ResonatorFBAR FilteLNASOCthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/62538/1/ntu-95-R93543029-1.pdf