Shiue, Han-FangHan-FangShiueWu, Hao-ChenHao-ChenWuLim, Kian-GuanKian-GuanLimChuang, Chun-HoChun-HoChuangMo, Chi-LinChi-LinMoMIIN-JANG CHEN2026-02-092026-02-092026-0409215107https://www.scopus.com/record/display.uri?eid=2-s2.0-105027223330&origin=resultslisthttps://scholars.lib.ntu.edu.tw/handle/123456789/735885In advanced semiconductor technology nodes below 10 nm, precise flat-band voltage (VFB) control is essential for tuning the threshold voltage. This study systematically investigates the incorporation of Ti-doped HfO2 (HTO) interlayers into metal-oxide-semiconductor capacitors to modulate VFB while maintaining favorable electrical performance. A ∼2 nm HTO interlayer was prepared via atomic layer deposition (ALD) supercycles with controlled Ti doping concentrations and strategically positioned within the high-k dielectric stacks. The results reveal that a 50 % Ti-doped HTO interlayer located at the dielectric/Si interface produces the most significant VFB shift, along with reduced equivalent oxide thickness (EOT) and an acceptable leakage current density. This VFB modulation is attributed to interface dipole engineering as a result of the difference in electronegativity between Ti–O–Si and Hf–O–Si bonds. Furthermore, VFB is strongly correlated with the spatial placement of the interlayer: VFB shifts are pronounced when the HTO interlayer is positioned at the dielectric/Si or metal/dielectric interfaces, but minimal when embedded within the HfO2 matrix due to the cancellation of opposite dipoles. This study establishes an effective and scalable approach to dipole modulation in high-k gate stacks, enabling precise VFB control and EOT scaling for future low-power applications.falseAtomic layer deposition (ALD)Flat-band voltage (VFB)Hafnium oxideHigh-k gate dielectricsMetal-oxide-semiconductor (MOS) capacitorsjournal article10.1016/j.mseb.2026.1191822-s2.0-105027223330