Yan M.-HWu M.-HHuang H.-HChen Y.-HChu Y.-HWu T.-LYeh P.-CWang C.-YLin Y.-DSu J.-WTzeng P.-JSheu S.-SLo W.-CCHIH-I WUHou T.-H.2023-06-092023-06-09202001631918https://www.scopus.com/inward/record.uri?eid=2-s2.0-85102921157&doi=10.1109%2fIEDM13553.2020.9371916&partnerID=40&md5=d3af1e1dc30c16500233e14813738791https://scholars.lib.ntu.edu.tw/handle/123456789/632151An experiment-calibrated SPICE model considering dynamic ferroelectric switching and charge injection is established to co-optimize memory window, write speed, endurance, and retention of MFMFET where a standard BEOL HfZrOx MFM capacitor is stacked on top of the logic transistor. This promising SOC-compatible, low-power and low-voltage embedded memory achieves a high current on-off ratio > 104 when programming at ±2.5 V for 3 μs without compromising 10-year retention and MFM-equivalent endurance. A novel m-MFMFET utilizing multiple MFMs is also proposed. m-MFMFET achieves equivalent performance as the standard MFMFET but further reduces the unit cell size by 22 %. © 2020 IEEE.Electron devices; Hafnium compounds; Zirconium compounds; Embedded memory; Ferroelectric switching; High currents; Memory window; Multiple metals; On-off ratio; SPICE modeling; Unit cell size; Ferroelectricityconference paper10.1109/IEDM13553.2020.93719162-s2.0-85102921157