Tsai, T.-H.T.-H.TsaiLin, M.-Y.M.-Y.LinHsiao, L.-J.L.-J.HsiaoHOANG-YAN LINWING-KIT CHOI2018-09-102018-09-10201600214922http://www.scopus.com/inward/record.url?eid=2-s2.0-84963701887&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/396506We investigate experimentally the enhancing effect of plasmonic subwavelength crossed Ag gratings on photoluminescence (PL) from the amorphous silicon quantum dots (a-Si QDs) embedded in a central silicon-rich SiOx film of the Ag/SiOx:a-Si QDs/Ag sandwich nanostructures. The use of the crossed Ag grating structure as the top layer in the sandwich nanostructures results in a 2-fold increase in the PL peak intensity and a 1.34-fold increase in the integrated emission intensity compared with the use of a one-dimensional (1D) Ag grating top layer, and a 1.53-fold peak intensity increase compared with that of a SiOx:a-Si QDs/Ag structure without a Ag top layer. These significant PL enhancements can be attributed to the high light-extraction efficiency of the polarization-independent crossed metallic grating structure, the strong out-coupling of localized surface plasmons (LSPs), and the strong a-Si QD-LSP coupling. © 2016 The Japan Society of Applied Physics.[SDGs]SDG3Amorphous films; Diffraction gratings; Nanocrystals; Nanostructures; Photoluminescence; Plasmons; Semiconductor quantum dots; Silicon; Silicon oxides; Silver; Surface plasmon resonance; Enhancing effect; Grating structures; Integrated emissions; Localized surface plasmon; Metallic gratings; Polarization independent; Silicon quantum dots; Sub-wavelength; Amorphous siliconjournal article10.7567/JJAP.55.04EH152-s2.0-84963701887