Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors

Chow, Y.C.Y.C.ChowLee, C.C.LeeWong, M.S.M.S.WongWu, Y.-R.Y.-R.WuNakamura, S.S.NakamuraDenbaars, S.P.S.P.DenbaarsBowers, J.E.J.E.BowersSpeck, J.S.J.S.SpeckYUH-RENN WU2021-05-052021-05-052020https://www.scopus.com/inward/record.url?eid=2-s2.0-85089132761&partnerID=40&md5=c4ca79cc97f4ee4fc36b7b96b37e35c8https://scholars.lib.ntu.edu.tw/handle/123456789/559393Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectorsjournal article10.1364/OE.3999242-s2.0-85089132761WOS:000560931200064