Kao, Chi YiChi YiKaoLin, Jin ChengJin ChengLinJENN-GWO HWU2024-01-182024-01-182024-01-0109478396https://scholars.lib.ntu.edu.tw/handle/123456789/638639In this work, the concentric structure of MIS tunnel diodes with coupling effect was explored for memory application. The thickness of the charge storage layer (Al2O3/SiO2) and annealing temperature were controlled to result in an efficient charge trapping with electrons from the substrate. This led to a significant reduction in operation time. In addition, it was found that the signal of non-uniform charge trapping at the device edge could be amplified (about three times) in the tunneling current of nearby MIS TD through the coupling effect. This phenomenon was initially observed and subsequently validated through TCAD simulation. Utilizing the coupling effect and the non-uniform charge storage, the proposed device’s operating window is 1 V, with an on/off ratio of approximately 100. Furthermore, it exhibits small cycle-to-cycle variation (3%) and low power consumption.Al O 2 3 | Coupling effect | Metal–insulator–semiconductor (MIS) | Nitric acid oxidation | Tunnel diode (TD)[SDGs]SDG7journal article10.1007/s00339-023-07192-x2-s2.0-85180710582https://api.elsevier.com/content/abstract/scopus_id/85180710582