Ku, P.-C.P.-C.KuCHING-FUH LINLee, B.-L.B.-L.Lee2018-09-102018-09-10199600036951http://www.scopus.com/inward/record.url?eid=2-s2.0-0030395231&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/323871https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030395231&doi=10.1063%2f1.117845&partnerID=40&md5=4dc3b099e0bb7537bf734f9dad46c1fbA multiple cross switching phenomenon is observed in a two-mode semiconductor laser in an external cavity. Its physical origins are investigated. The changing temperature or injection current causes the variation of the refractive index and the length of the laser diode, leading to the shift of the modulated gain peaks of the anti-reflection-coated laser diode in the external cavity. Consequently, the two modes experience different gains periodically and the strong gain competition then leads to the multiple cross switching. © 1996 American Institute of Physics.application/pdfapplication/pdfAntireflection coatings; Electric currents; Laser modes; Refractive index; Semiconducting gallium arsenide; Switching; Temperature; Injection current; Multiple cross switching phenomenon; Semiconductor lasersjournal article2-s2.0-0030395231