Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics

Lin, C.A.C.A.LinLin, T.D.T.D.LinChiang, T.H.T.H.ChiangChiu, H.C.H.C.ChiuChang, P.P.ChangMINGHWEI HONGKwo, J.J.Kwo2019-12-272019-12-272009https://scholars.lib.ntu.edu.tw/handle/123456789/443402Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectricsjournal article10.1016/j.jcrysgro.2008.10.0132-s2.0-63349110308https://www.scopus.com/inward/record.uri?eid=2-s2.0-63349110308&doi=10.1016%2fj.jcrysgro.2008.10.013&partnerID=40&md5=cd701573a9b8f7d741c5fd71bc0dabd0