The characteristic behavior of TMAH water solution for anisotropic etching on both Silicon substrate and SiO2 layer

Chen, P.-H.P.-H.ChenPeng, H.-Y.H.-Y.PengHsieh, J.-M.J.-M.HsiehChyu, M. K.M. K.Chyu2008-10-282018-06-282008-10-282018-06-282001http://ntur.lib.ntu.edu.tw//handle/246246/85704application/pdf339531 bytesapplication/pdfen-USThe characteristic behavior of TMAH water solution for anisotropic etching on both Silicon substrate and SiO2 layerjournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/85704/1/29.pdf