2011-08-012024-05-17https://scholars.lib.ntu.edu.tw/handle/123456789/688095摘要：本計畫將以過去數年所開發的高品質 InAsPSb/InAsSb 第一型量子井來研發 3-5 μm中紅外線半導體光電元件。我們的研究重點為開發電漿子加強式(plasmon-enhanced)夾層與三元 AlAsSb 夾層材料。電漿子加強式夾層為n+-InAs，利用高電子濃度來提高電漿頻率以降低 InAs 在中紅外線波段的折射率。同時由於高電子濃度造成的Burstein-Moss shift 可以提供電洞的載子局限。這兩種夾層材料與四元、五元材料相較具有較容易成長的優點，也較易避免不互熔(immiscibility)與折射率異常的問題。我們將研製由 InAsPSb/InAsSb 第一型量子井、開發電漿子加強式夾層與三元AlAsSb 夾層材料所組成的中紅外線雷射元件。此外，我們也將研究碎能隙(broken gap)接面；p-GaAsSb/n-InAs 以及 p-GaAsSb/n-InAsPSb。這種接面可做為電子電洞對的產生或復合點，可被用來連接元件的主動層以構成多層串接元件。此類中紅外線光電元件在環境監測、醫療、軍事等方面有很大的應用價值。<br> Abstract: This project is aimed at the development of 3-5 m mid-infrared devices based on type-I InAsSb/InAsPSb quantum wells (QWs), achieved by us in the past few years. Our studies will be focused on tenary cladding layer, plasmon-enhanced binary cladding layer, and novel structures for cascaded device. The proposed plasmon-enhanced cladding layer is heavily Si-doped InAs. The high electron density raises the plasma frequency, which strongly decreases the refractive index of InAs in mid-infrared region. Besides, the high density also results in strong Burstein Moss shift, providing a good confinement for hole. The ternary cladding layer is AlAsSb lattice-matched to InAs. These materials can avoid the complexity and immiscibility usually encoutered in Sb-based quaternary or quinternary. MIR 3-5 μm lasers, consisting of InAsSb/InAsPSb type-I QWs, n+-InAs plasmon-enhanced cladding layer, and n-AlAsSb cladding layer, will be designed and fabricated in this project. In additions, we will also study the broken gap junctions, p-GaAsSb/n-InAs and p-GaAsSb/n-InAsPSb, which can serve as a sink or source for electron-hole pairs and can be used to connect active media to compose a multistage cascade device. We expect to accomplish mid-infrared 3-5 μm semiconductor lasers with room temperature. The compact, low cost and high efficient light source will be of important applications on environmental monitoring, bio-medicine, industrial process control and military.砷銻磷化銦砷銻化鎵砷銻化鋁第一型量子井中紅外線光電元件分子束磊晶電漿子加強型波導InAsPSbGaAsSbAlAsSbtype-I quantum wellMIR optoelectronic devicesMBEplasmon-enhanced waveguide新穎窄能隙半導體材料與光電元件之研究