Energy-band parameters of atomic-layer-deposition Al<inf>2</inf>O <inf>3</inf>/InGaAs heterostructure

Huang, M.L.M.L.HuangChang, Y.C.Y.C.ChangChang, C.H.C.H.ChangLin, T.D.T.D.LinKwo, J.J.KwoWu, T.B.T.B.WuMINGHWEI HONG2019-12-272019-12-272006https://scholars.lib.ntu.edu.tw/handle/123456789/443454Energy-band parameters of atomic-layer-deposition Al<inf>2</inf>O <inf>3</inf>/InGaAs heterostructurejournal article10.1063/1.22188262-s2.0-33745801289https://www.scopus.com/inward/record.uri?eid=2-s2.0-33745801289&doi=10.1063%2f1.2218826&partnerID=40&md5=ca159645baaad406b9be1a493cbd4cb0