Hong, C.-C.C.-C.HongChen, W.-R.W.-R.ChenJENN-GWO HWU2018-09-102018-09-102002https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036309905&doi=10.1143%2fJJAP.41.1&partnerID=40&md5=116626aa68ee053a51dd1997d6319796http://scholars.lib.ntu.edu.tw/handle/123456789/296935The significance of the oxide thickness nonuniformity effect on the current density-voltage (J-V) characteristics of gate oxide in an ultrathin region is demonstrated. Theoretical J-V curves of metal-oxide-semiconductor (MOS) under small and large biases were derived according to the existing literature, and were used to study the J-V characteristics of an MOS capacitor containing different local oxide thicknesses was studied. An effect we called "local thinning", which stretches out the J-V curves, was observed. The magnitude of the tunneling current is governed by the thinner oxide region in the capacitor although this region only occupies a relative small area ratio. Experiments were performed on intentional etching of silicon wafers to reinforce the oxide thickness nonuniformity effect. The experimental results are explainable by the model observation.Composed capacitor; Local thinning; Metal-oxide-semiconductor (MOS); Oxide thickness nonuniformity; Tunneling currentCurrent voltage characteristics; Electron tunneling; Etching; Silicon wafers; Tunneling current; MOS capacitorsjournal article10.1143/JJAP.41.12-s2.0-0036309905