Dept. of Electr. Eng., National Taiwan Univ.Liu, Chih-YunChih-YunLiuYI-JAN EMERY CHENHeo, DeukhyounDeukhyounHeo2018-09-102018-09-10200502714310http://www.scopus.com/inward/record.url?eid=2-s2.0-33750811202&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/314308This paper investigates the performance of a 2.4- GHz CMOS two-way Doherty power amplifier with the different bias schemes for the auxiliary power device. For the conventional bias schemes, there are design tradeoffs in terms of power gain, gain flatness, P1dB, power-added efficiency, and third order harmonics. An adaptive bias scheme is proposed to bias the auxiliary device at class C for low power operation and at class AB for high power operation. It is shown that the adaptive bias scheme can achieve excellent performance without compromising some characteristics. © 2005 IEEE.application/pdf572442 bytesapplication/pdf[SDGs]SDG7Adaptive bias; Auxiliary device; Auxiliary power; Class-AB; Design tradeoff; Doherty power amplifier; Excellent performance; Gain flatness; High-power operation; Low-power operation; Power gains; Power-added efficiency; Third order harmonics; Power amplifiers; Heterojunction bipolar transistorsImpact of bias schemes on doherty power amplifiersconference paper10.1109/ISCAS.2005.14645622-s2.0-33750811202