Lou Z.F.Chen B.-R.Hsiang K.-Y.Chang Y.-T.Liu C.-H.Tseng H.-C.Liao H.-T.Su P.MIN-HUNG LEE2024-11-192024-11-192024-01-0107413106https://scholars.lib.ntu.edu.tw/handle/123456789/723130High Zr concentration of super-lamination (SL) HZO/ZrO2/HZO (HZZ) with morphotropic phase boundary (MPB) to enhance dielectric constant to 46 and 2Pr of 44 μC/cm2 is employed in ferroelectric capacitive memory (FCM). The proposed HZZ memcapacitor demonstrates a remarkably high CHCS/CLCS ratio of 245x with 3 V, excellent data retention > 104 s, multi-level cell (MLC), and achieves non-destructive read operation (NDRO) for 109 cycles. The MPB-based SL technique for HZZ is a promising concept that elevates the permittivity for FCM/memcapacitor non-volatile memory (NVM) or advanced logic applications. © 1980-2012 IEEE.enfalseferroelectricHfZrO2memcapacitormorphotropic phase boundaryjournal article10.1109/LED.2024.34859162-s2.0-85207899945