First Vertically Stacked, Compressively Strained, and Triangular Ge<inf>0.91</inf>Sn<inf>0.09</inf> pGAAFETs with High ION of 19.3£gA at VOV=VDS=-0.5V, Gm of 50.2£gS at VDS=-0.5V and Low SSlin of 84mV/dec by CVD Epitaxy and Orientation Dependent Etching

Huang, Y.-S.Y.-S.HuangYe, H.-Y.H.-Y.YeLu, F.-L.F.-L.LuLiu, Y.-C.Y.-C.LiuTu, C.-T.C.-T.TuLin, C.-Y.C.-Y.LinLin, S.-H.-Y.S.-H.-Y.LinJan, S.-R.S.-R.JanCHEE-WEE LIU2021-02-222021-02-222019https://www.scopus.com/inward/record.url?eid=2-s2.0-85070341014&partnerID=40&md5=a81bb662f8725a90fa957d11059b4900https://scholars.lib.ntu.edu.tw/handle/123456789/549177First Vertically Stacked, Compressively Strained, and Triangular Ge<inf>0.91</inf>Sn<inf>0.09</inf> pGAAFETs with High ION of 19.3£gA at VOV=VDS=-0.5V, Gm of 50.2£gS at VDS=-0.5V and Low SSlin of 84mV/dec by CVD Epitaxy and Orientation Dependent Etchingconference paper10.23919/VLSIT.2019.87765502-s2.0-85070341014