Short-channel effects of SOI partially-depleted (PD) dynamic-threshold MOS (DTMOS) devices

Dept. of Electr. Eng., National Taiwan Univ.Lin, S.C.S.C.LinYuan, K.H.K.H.YuanKuo, J.B.J.B.Kuo2007-04-192018-07-062007-04-192018-07-062000-06http://ntur.lib.ntu.edu.tw//handle/246246/2007041910021430application/pdf166428 bytesapplication/pdfen-USShort-channel effects of SOI partially-depleted (PD) dynamic-threshold MOS (DTMOS) devicesjournal article10.1109/HKEDM.2000.904213http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910021430/1/00904213.pdf