Wu, Yu JuiYu JuiWuChiang, Chih YingChih YingChiangTsao, Hung YuHung YuTsaoLi, Tsung YingTsung YingLiWang, Tz MingTz MingWangLin, Min JuiMin JuiLinLiu, Chia YouChia YouLiuYeh, Ching ChenChing ChenYehYang, Cheng HsuehCheng HsuehYangCHI-TE LIANGJIUN-YUN LI2022-12-152022-12-152022-01-019781665409230https://scholars.lib.ntu.edu.tw/handle/123456789/626459https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85130425647&origin=inwardIn this work, we demonstrate Coulomb blockade for both Si metal-oxide-semiconductor (MOS) nanowire and Si/SiGe heterostructure finger-type quantum dots (QDs). Clear quantum oscillations of the QD conductance were observed at temperatures of 23 mK to 1.5 K. Charge stability diagrams with unambiguous boundaries were also demonstrated at 23 mK.Dielectric devices; Heterojunctions; Metals; MOS devices; Nanocrystals; Oxide semiconductors; Silicon compounds; Transistors; Charge stability; Quantum oscillations; Si/SiGe heterostructures; Stability diagram; Semiconductor quantum dotsconference paper10.1109/VLSI-TSA54299.2022.97709812-s2.0-85130425647